Abstract: This article proposes a parallel-connected 40-pulse diode rectifier (40PDR) based on a 20-pulse diode rectifier (20PDR) with a passive pulse multiplication circuit (PPMC) to mitigate ...

Abstract: To clarify the influence of using different harmonic reduction circuits (HRCs) on open-circuit fault characteristics, and the relationship between steady-state and fault-state power quality ...

We collaborate with the world's leading lawyers to deliver news tailored for you. Sign Up for any (or all) of our 25+ Newsletters. Some states have laws and ethical rules regarding solicitation and ...

SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced the launch of two new 6th-generation (Gen6) 650V Insulated Gate Bipolar ...

SAN MARCOS, Texas — Living close to campus was important for Kristy Money and her husband, Rolf Straubhaar – both of whom are educators at Texas State University – when they bought their "forever" ...

MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 ...

For Part 1, click here. High-speed optical communications applications have some high-level transimpedance-amplifier (TIA) circuit similarities with laser rangefinders (LRFs) and LiDAR. However, there ...

How transimpedance amplifiers are used in fiber-optic communications, laser rangefinders, and LiDAR systems. How avalanche photodiodes enhance TIA performance. Application-specific design and topology ...

Nearly four decades ago (in his Designs for High Performance Voltage-to-Frequency Converters), famed designer Jim Williams cataloged five fundamental techniques for voltage to frequency conversion.

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...