2D material offers a solution to long-standing obstacle in diamond-based circuits

Beyond their sparkle, diamonds have hidden talents. They shed heat better than any material, tolerate extreme temperatures ...
Semiconductor Engineering

Oxides Bring Low Leakage Transistors To Leading-Edge Memories

Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage. Amorphous oxides are especially attractive for stacked devices because ...
pv magazine International

Scientists achieve 32.6% efficiency in perovskite-silicon tandem solar cell via interface engineering

Researchers from KAUST, TU Delft, and LMU Munich have improved the performance of monolithic perovskite-silicon tandem solar cells by modifying the physical structure at the front of the bottom ...
IEEE

Recovery Operation in HfZrO x-Based FeFETs With Interfacial Layer Scavenging

Abstract: This work investigates the recovery operation and interfacial layer (IL) scavenging to improve the performance and reliability of HfZrO x-based ferroelectric field-effect transistors (FeFETs ...
techxplore

Ultrathin polymer layer extends lifespan of anode-free lithium metal batteries

Anode-free lithium metal batteries, which have attracted attention as candidates for electric vehicles, drones, and next-generation high-performance batteries, offer much higher energy density than ...
IEEE

Impact of Channel Material, Interface Quality, and Polarization on Memory Window of Interfacial Layer-Free FeFET With Oxide Semiconductor

Abstract: This study systematically investigates the modulation of the memory window (MW) in interfacial layer (IL)-free and Hfx $Zr_{{1}-{x}}$ O2 (HZO)-based ...