EDN

IMEC details high-k planar CMOS advances

LONDON — Researchers from Belgian research group IMEC and its partners in the 32-nm CMOS program claim to have made significant advances in improving the performance of planar CMOS using hafnium-based ...
EDN

IMEC details high-k metal gate planar CMOS progress

At the IEEE International Electron Devices Meeting being held this week, Leuven, Belgium-based nanotechnology research center IMEC is reporting significant progress in improving the performance of ...
Houston Chronicle

(BW) SEMATECH to Continue Pursuing Planar Transistor Scaling Strategy, But Will Investigate FinFETs as an Alternative

Front-end engineers at SEMATECH will combine planar CMOS approaches with new channel materials to develop effective transistors for the 22 nm half-pitch technology generation – but will continue to ...
Semiconductor Engineering

Foundries Prepare For Battle At 22nm

After introducing new 22nm processes over the last year or two, foundries are gearing up the technology for production—and preparing for a showdown. Nonetheless, foundry vendors are pushing 22nm for a ...
Science Daily

Making metal–halide perovskites useful in planar devices through a new hybrid structure

Two of the main drawbacks of using tin (Sn)-based metal halide perovskites (MHPs) in thin-film transistors have been simultaneously solved by an innovative hybrid 2D/3D structure. New findings will ...
Nature

Low Power Design in CMOS and FinFET Logic Circuits

Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...