The MB85R2001 is 2 Mbit Ferroelectric Random Access Memory (FRAM) chip packaged on a 48-pin plastic TSOP and operating at a temperature range of -20°C to +85°C. It has 10 years of data retention and ...

The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming ...

COLORADO SPRINGS, Colo.--(BUSINESS WIRE)--Oct. 18, 2004--Ramtron International Corporation (Nasdaq:RMTR), the leading supplier of nonvolatile ferroelectric semiconductor products, today announced that ...

Just as magnetic materials have opposing North and South poles, ferroelectric materials have opposing positive charges and negative charges that exhibit measurable differences in electric potential.

Ongoing Collaboration Includes Production of World's First 4-Megabit Nonvolatile FRAM Featuring the Highest Density Available DALLAS, March 12 /PRNewswire/ -- Texas Instruments (TI) (NYSE: TXN) and ...

Introduced as the first nonvolatile memory to feature unlimited endurance, the 256-Kb, 3V FM18L08 ferroelectric random access memory (FRAM) offers an unlimited number of read and write ...

Ferroelectric materials remain ferroelectric even at nanometer dimensions. Ferroelectric random access memory (FRAM) is a form of non-volatile memory that is now used widely in applications from ...

I reached out to a few folks to be sure to answer your question properly. Roger Stewart, a patent expert in the radio frequency identification field, says all chips he knows of use EEPROM memory, not ...

The scientists of the Lobachevsky University and the Institute of Low Temperatures and Structural Research in Wroclaw (Poland) conducted unique studies of oscillation properties using modern methods ...

The precious Pokemon we spent hours capturing in the early nineties remain trapped, not just by pokeballs, but within a cartridge ravaged by time. Generally, Pokemon games before the GameBoy Advance ...